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FQB4N80TM - onsemi

Description: 3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A; Low Crss ( Typ. 8.6pF); RoHS compliant; Low gate charge ( Typ. 19nC); 100% avalanche tested

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Symbol
FQB4N80TM - onsemi - PCB symbol
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PCB Footprints
FQB4N80TM - onsemi PCB footprint - Other - Other - TO-263 2L (D2 PAK)
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3D Models
FQB4N80TM - onsemi - 3D model - Other - TO-263 2L (D2 PAK)
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FQB4N80TM Details

  • Manufacturer Part Number:

    FQB4N80TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    460 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    3.9 A

  • Drain-source On Resistance-Max:

    3.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    15.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    160 ns

  • Turn-on Time-Max (ton):

    140 ns

FQB4N80TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQB4N80TM is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper biasing, make sure to follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings specified in the datasheet. Additionally, use a gate driver with a suitable voltage rating and ensure the gate resistor is properly sized to prevent oscillations.
  • For optimal thermal performance, use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current. Implement a shutdown circuit to disconnect the device from the power source in case of an overcurrent event.
  • The recommended gate drive voltage is 10-15V, with a rise and fall time of 10-20 ns. The switching frequency should be limited to 100 kHz or lower to prevent excessive switching losses. Use a gate driver with a high current capability to ensure fast switching times.

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FQB4N80TM Overview

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FQB4N80TM Alternates

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Part Image FQB4N80TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB