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FQD13N10TM - Rochester Electronics LLC

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Part Image FQD13N10TM onsemi

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Part Image FQD13N10TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD13N10 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252