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FQD6N40CTM - onsemi

Description: 4.5A, 400V, RDS(on) = 1.0Ω(Max.) @VGS = 10 V, ID = 2.25A; Low gate charge ( Typ. 16nC); Low Crss ( Typ. 15pF); 100% avalanche tested

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PCB Footprints
FQD6N40CTM - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B
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3D Models
FQD6N40CTM - onsemi  - 3D model - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B
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FQD6N40CTM Details

  • Manufacturer Part Number:

    FQD6N40CTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.25

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    175 ns

FQD6N40CTM Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQD6N40CTM is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good thermal contact between the device and the heat sink using a thermal interface material.
  • The recommended gate drive voltage for the FQD6N40CTM is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the FQD6N40CTM is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and thermal performance when designing the application.
  • To protect the FQD6N40CTM from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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FQD6N40CTM Overview

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