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FQP8N90C - onsemi

Description: 100% avalanche tested; 6.3A, 900V, RDS(on) = 1.9Ω(Max.) @VGS = 10 V, ID = 3.15A; Low gate charge ( Typ. 35nC); Low Crss ( Typ. 12pF)

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FQP8N90C Overview

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FQP8N90C Alternates

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Image	Part Number	Model
	FQP6N90 Rochester Electronics LLC 5.8A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
	FQP8N90C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	FQP8N90C-Q Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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