FQPF9N50C - onsemi

Description: 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A; Low Crss (Typ. 24 pF); 100% Avalanche Tested; Low Gate Charge (Typ. 28 nC)

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Image	Part Number	Model
	FQPF9N50C Rochester Electronics LLC 9A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
	IRFS840B Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FQPF9N50C - onsemi

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FQPF9N50C Alternates