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GS66502B-MR - Infineon Technologies AG

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Image Part Number Model
Part Image GS66502B-TR Infineon Technologies AG

Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

Part Image GS66502B-TR GaN Systems

Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET