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IPB019N06L3G Overview

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PSMN1R7-60BS,118 Nexperia

Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

934065175118 Nexperia

Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IPB019N06L3GATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IPB019N06L3GXT Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB


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Image	Part Number	Model
	PSMN1R7-60BS,118 Nexperia Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	934065175118 Nexperia Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	IPB019N06L3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	IPB019N06L3GXT Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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IPB019N06L3G - Infineon

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