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IPB100N04S204ATMA4 - Infineon

Description: MOSFET MOSFET_(20V 40V)

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IPB100N04S204ATMA4 - Infineon PCB footprint - Other - Other - IPB100N04S204ATMA4-1
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IPB100N04S204ATMA4 Details

  • Manufacturer Part Number:

    IPB100N04S204ATMA4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-263, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB100N04S204ATMA4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB100N04S204ATMA4 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPB100N04S204ATMA4 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB100N04S204ATMA4 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPB100N04S204ATMA4 Overview

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Part Image IPB100N04S2-04 Rochester Electronics LLC

100A, 40V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Image IPB100N04S204ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB