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IPB100N12S305ATMA2 - Infineon Technologies AG

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Part Image IPB100N12S3-05 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB100N12S305ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB