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IPB70N10S312XT - Infineon Technologies AG

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Part Image IPB70N10S3-12 Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB70N10S312ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB70N10S312ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB