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IPD35N10S3L26XT - Infineon Technologies AG

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Image Part Number Model
Part Image IPD35N10S3L26ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IPD35N10S3L26ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IPD35N10S3L-26 Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252