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IPD50R950CE - Infineon

Description: Infineon IPD50R950CE N-channel MOSFET Transistor, 4.3 A, 550 V, 3-Pin TO-252

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Part Image IPD50R950CEAUMA1 Infineon Technologies AG

Power Field-Effect Transistor, 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IPD50R950CEBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 4.3A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252