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IPLU300N04S4-R7 - Infineon

Description: 40V 300A 429 Watt N-Channel Mosfet

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IPLU300N04S4-R7 - Infineon PCB footprint - Other - Other - IPLU300N04S4-R7-3
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IPLU300N04S4-R7 Details

  • Manufacturer Part Number:

    IPLU300N04S4-R7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, SOF-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.00076 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    1200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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IPLU300N04S4-R7 Overview

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Part Image IPLU300N04S4R8XTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 300A I(D), 40V, 0.00077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IPLU300N04S4-R8 Infineon Technologies AG

Power Field-Effect Transistor, 300A I(D), 40V, 0.00077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IPLU300N04S4R7XTMA2 Infineon Technologies AG

Power Field-Effect Transistor, 300A I(D), 40V, 0.00076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET