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IPW60R099CPA - Infineon

Description: MOSFET AUTOMOTIVE

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IPW60R099CPA - Infineon  - 3D model
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IPW60R099CPA Details

  • Manufacturer Part Number:

    IPW60R099CPA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R099CPA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW60R099CPA is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate resistor value for the IPW60R099CPA is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPW60R099CPA is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.

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IPW60R099CPA Overview

Use the download button to access the IPW60R099CPA 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Image Part Number Model
Part Image IPW60R099P6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099CPFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099P7 Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099P6 Infineon Technologies AG

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099CP Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

For a full list of alternate parts for IPW60R099CPA, check out Findchips.com