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IR2111PBF - Infineon

Description: Infineon IR2111PBF Dual Half Bridge MOSFET Power Driver, 0.5A 8-Pin, PDIP

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IR2111PBF - Infineon - PCB symbol
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PCB Footprints
IR2111PBF - Infineon PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - IR2111(S) & (PbF)
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IR2111PBF - Infineon - 3D model - Dual-In-Line Packages - IR2111(S) & (PbF)
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IR2111PBF Details

  • Manufacturer Part Number:

    IR2111PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • High Side Driver:

    YES

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDIP-T8

  • Length:

    9.88 mm

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    PUSH-PULL

  • Output Peak Current Limit-Nom:

    0.5 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP8,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    5.33 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    5 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.18 µs

  • Turn-on Time:

    0.95 µs

  • Width:

    7.62 mm

IR2111PBF Frequently Asked Questions (FAQs)

  • The maximum voltage rating of the IR2111PBF is 500V, which is the maximum voltage that can be applied between the VCC and COM pins.
  • To ensure proper thermal management, it is recommended to provide a heat sink or a thermal pad to dissipate heat generated by the device. The thermal resistance of the package is 2.5°C/W, and the maximum junction temperature is 150°C.
  • The bootstrap capacitor is used to generate the high-side gate drive voltage. It is charged through the bootstrap diode and discharged through the high-side FET, allowing the high-side FET to be driven.
  • The bootstrap capacitor value depends on the specific application and the required gate drive voltage. A general guideline is to choose a capacitor with a value between 10nF to 100nF, with a voltage rating of at least 2x the maximum voltage applied to the high-side FET.
  • The deadtime is a critical parameter in the IR2111PBF that ensures the high-side and low-side FETs are not turned on simultaneously, which would cause shoot-through current and damage the device. The deadtime is typically set between 100ns to 500ns, depending on the application.

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IR2111PBF Overview

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Part Image IR2111 Infineon Technologies AG

Half Bridge Based IGBT/MOSFET Driver, 0.5A, CMOS, PDIP8