FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
High Side Driver:
YES
Input Characteristics:
STANDARD
Interface IC Type:
HALF BRIDGE BASED IGBT/MOSFET DRIVER
JESD-30 Code:
S-PQCC-J32
JESD-609 Code:
e3
Length:
16.5862 mm
Moisture Sensitivity Level:
3
Number of Functions:
3
Number of Terminals:
32
Operating Temperature-Max:
125 °C
Output Characteristics:
STANDARD
Output Peak Current Limit-Nom:
0.5 A
Output Polarity:
TRUE
Package Body Material:
PLASTIC/EPOXY
Package Code:
QCCJ
Package Equivalence Code:
LDCC44,.7SQ
Package Shape:
SQUARE
Package Style:
CHIP CARRIER
Peak Reflow Temperature (Cel):
250
Qualification Status:
Not Qualified
Seated Height-Max:
4.57 mm
Supply Voltage-Max:
20 V
Supply Voltage-Min:
10 V
Supply Voltage-Nom:
15 V
Supply Voltage1-Max:
620 V
Supply Voltage1-Min:
5 V
Supply Voltage1-Nom:
15 V
Surface Mount:
YES
Technology:
BICMOS
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
J BEND
Terminal Pitch:
1.27 mm
Terminal Position:
QUAD
Time@Peak Reflow Temperature-Max (s):
30
Turn-off Time:
0.95 µs
Turn-on Time:
1 µs
Width:
16.5862 mm
IR2133JTRPBF Frequently Asked Questions (FAQs)
The maximum operating frequency of the IR2133JTRPBF is 600 kHz, but it can be adjusted up to 1 MHz with an external oscillator.
Proper thermal management can be achieved by providing a heat sink, ensuring good airflow, and keeping the device away from heat sources. The thermal pad on the bottom of the package should be connected to a copper plane on the PCB to dissipate heat.
The recommended layout and routing for the IR2133JTRPBF involves keeping the high-frequency switching nodes (e.g., bootstrap capacitors, gate resistors) as close to the IC as possible, using short and wide traces, and minimizing the loop area to reduce EMI.
The IR2133JTRPBF has built-in dead time and overlap protection, which can be adjusted using the DT and OTP pins. The dead time can be set between 100 ns to 1.5 μs, and the overlap protection can be set to prevent simultaneous conduction of the high-side and low-side FETs.
When selecting the bootstrap capacitor, consider the voltage rating, capacitance value, and ESR. A minimum capacitance of 10 nF is recommended, and the voltage rating should be at least 2x the maximum voltage of the high-side FET. The ESR should be as low as possible to minimize power losses.
Trust Checks
This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
IR2133JTRPBF Overview
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