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IR25603STRPBF - Infineon

Description: Infineon Dual MOSFET Power Driver, 260mA 8-Pin, SOIC

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IR25603STRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO8N
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IR25603STRPBF - Infineon  - 3D model - Small Outline Packages - SO8N
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IR25603STRPBF Details

  • Manufacturer Part Number:

    IR25603STRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • Moisture Sensitivity Level:

    2

  • Qualification Status:

    Not Qualified

  • Temperature Grade:

    AUTOMOTIVE

IR25603STRPBF Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to improve heat dissipation. A minimum of 5 thermal vias with a diameter of 0.3 mm to 0.5 mm is recommended.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rated value.
  • The recommended gate drive voltage for the IR25603STRPBF is between 10 V to 15 V. This ensures optimal switching performance and minimizes power losses.
  • To protect the device from overvoltage and overcurrent conditions, it is recommended to use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a zener diode, and an overcurrent protection circuit, such as a fuse or a current sense resistor.
  • The recommended dead time for the high-side and low-side switches is typically in the range of 100 ns to 500 ns, depending on the specific application requirements and switching frequency.

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