AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
1250 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
75 V
Drain Current-Max (ID):
75 A
Drain-source On Resistance-Max:
0.0075 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
570 A
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRF1607 Frequently Asked Questions (FAQs)
The maximum safe operating area (SOA) for the IRF1607 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
To ensure proper thermal management, the IRF1607 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, and the device should be attached to the heat sink using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W.
The recommended gate drive voltage for the IRF1607 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
To protect the IRF1607 from overvoltage and overcurrent, a voltage clamp or surge protector can be used to limit the maximum voltage applied to the device. Additionally, a current sense resistor and a fuse or circuit breaker can be used to detect and respond to overcurrent conditions.
The recommended PCB layout for the IRF1607 involves minimizing the distance between the device and the heat sink, using a solid copper plane for the drain connection, and keeping the gate and source connections as short and wide as possible to minimize inductance and resistance.
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IRF1607 Overview
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