Part Image

IRF4905STRLPBF - Infineon

Description: P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.

Download IRF4905STRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF4905STRLPBF - Infineon PCB footprint - Other - Other - IRF4905STRLPBF-3
click to zoom
3D Models
IRF4905STRLPBF - Infineon  - 3D model - Other - IRF4905STRLPBF-3
click to zoom

IRF4905STRLPBF Details

  • Manufacturer Part Number:

    IRF4905STRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF4905STRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF4905STRLPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF4905STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF4905STRLPBF is suitable for high-frequency switching applications, but ensure the device is operated within its specified switching frequency and duty cycle ratings.
  • Handle the device with ESD-protective equipment, and ensure the device is stored in an ESD-protective package or bag when not in use.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF4905STRLPBF Overview

Use the download button to access the IRF4905STRLPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF49, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF4905STRLPBF

Showing 0 results

IRF4905STRLPBF Alternates

Showing results

Image Part Number Model
Part Image IRF4905STRLPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF4905SPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image AUIRF4905S International Rectifier

Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF4905STRLHR International Rectifier

Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF4905SHR International Rectifier

Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRF4905STRLPBF, check out Findchips.com