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IRF510 - Vishay

Description: MOSFET RECOMMENDED ALT 844-IRF510PBF

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IRF510 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF510
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IRF510 - Vishay  - 3D model - Transistor Outline, Vertical - IRF510
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IRF510 Details

  • Manufacturer Part Number:

    IRF510

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF510 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRF510 is typically defined by the voltage and current ratings. The maximum voltage rating is 100V and the maximum current rating is 5.6A. However, it's essential to consider the thermal and electrical stress on the device to ensure reliable operation.
  • To calculate the power dissipation of the IRF510, you need to consider the voltage drop across the device (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. Additionally, you should also consider the thermal resistance (Rth) and the junction temperature (Tj) to ensure the device operates within its thermal limits.
  • The recommended gate drive voltage for the IRF510 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching characteristics. A higher gate drive voltage can result in faster switching times, but it may also increase the power consumption and electromagnetic interference (EMI).
  • Yes, the IRF510 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF510 has a relatively high gate charge, which can affect its performance at high frequencies. Additionally, the device's parasitic capacitances and inductances should be considered to ensure stable operation.
  • To protect the IRF510 from overvoltage and overcurrent conditions, you can use a combination of voltage regulators, zener diodes, and current-sensing resistors. Additionally, you can implement overcurrent protection using a current-sensing circuit and a comparator to detect excessive current levels. It's also essential to ensure the device is operated within its safe operating area (SOA) to prevent damage from electrical overstress.

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IRF510 Overview

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Part Image IRF510 STMicroelectronics

Power Field-Effect Transistor, 6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF510 Motorola Semiconductor Products

Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF510 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220