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IRF520NPBF - Infineon

Description: N-channel MOSFET,IRF520N 9.5A 100V

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IRF520NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF520NPBF-1
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3D Models
IRF520NPBF - Infineon  - 3D model - Transistor Outline, Vertical - IRF520NPBF-1
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IRF520NPBF Details

  • Manufacturer Part Number:

    IRF520NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.05

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    47 W

  • Pulsed Drain Current-Max (IDM):

    38 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF520NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF520NPBF is -55°C to 175°C.
  • Yes, the IRF520NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of ≤ 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and thermal vias to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRF520NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • No, the IRF520NPBF is not designed for linear mode operation. It's intended for switching applications only, and operating it in linear mode may lead to reduced performance, increased power dissipation, and potentially damage the device.

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IRF520NPBF Overview

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