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IRF520SPBF - Vishay

Description: MOSFET N-Channel 100V

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IRF520SPBF - Vishay PCB footprint - Other - Other - TO-263AB_2021
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IRF520SPBF Details

  • Manufacturer Part Number:

    IRF520SPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.2 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF520SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF520SPBF is -55°C to 175°C.
  • Yes, the IRF520SPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
  • To ensure proper thermal management, use a heat sink with a thermal resistance of 1°C/W or lower, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and thermal vias to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRF520SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • No, the IRF520SPBF is not designed for linear mode operation. It's intended for switching applications only, and operating it in linear mode may lead to reduced performance, increased power dissipation, and potential device damage.

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Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB