IRF5210STRRPBF - Infineon

IRF5210STRRPBF Details

• Manufacturer Part Number:

  IRF5210STRRPBF

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• ECCN Code:

  EAR99

• Factory Lead Time:

  4 Weeks

• Date Of Intro:

  1996-08-14

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  0

• Additional Feature:

  HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

• Avalanche Energy Rating (Eas):

  120 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  38 A

• Drain-source On Resistance-Max:

  0.06 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  170 W

• Pulsed Drain Current-Max (IDM):

  140 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn) - with Nickel (Ni) barrier

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON