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IRF540ZPBF - Infineon

Description: MOSFET Transistor, N-Channel, TO-220AB

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IRF540ZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_
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IRF540ZPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_
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IRF540ZPBF Details

  • Manufacturer Part Number:

    IRF540ZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    91 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF540ZPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF540ZPBF is -55°C to 175°C.
  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 10°C/W.
  • The maximum voltage rating for the IRF540ZPBF is 100V.
  • Yes, the IRF540ZPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize switching losses.
  • Handle the device with ESD-protective equipment, and ensure the device is stored in an ESD-protective package or bag when not in use.

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Part Image AUIRF540Z International Rectifier

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF540ZPBF International Rectifier

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB