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IRF624 - Samsung Semiconductor

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IRF624 Overview

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Image Part Number Model
Part Image IRF624 Vishay Siliconix

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF624 International Rectifier

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF624 Intersil Corporation

Power Field-Effect Transistor, 4.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRF624 Harris Semiconductor

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF624 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRF624, check out Findchips.com