Part Image

IRF7493TRPBF - Infineon

Description: MOSFETs MOSFT 80V 9.2A 15mOhm 31nC Qg

Download IRF7493TRPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IRF7493TRPBF - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IRF7493TRPBF Details

  • Manufacturer Part Number:

    IRF7493TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    LEAD FREE, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    9.3 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    74 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7493TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7493TRPBF is -55°C to 150°C.
  • No, the IRF7493TRPBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
  • Yes, the IRF7493TRPBF is qualified for automotive applications and meets the requirements of the AEC-Q101 standard.
  • The maximum power dissipation for the IRF7493TRPBF is 125W at a case temperature of 25°C.
  • Yes, the IRF7493TRPBF is a RoHS-compliant device, meaning it meets the European Union's Restriction of Hazardous Substances directive.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IRF7493TRPBF Overview

Use the download button to access the IRF7493TRPBF 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF74, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF7493TRPBF

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IRF7493TRPBF Alternates

Showing results

Image Part Number Model
Part Image IRF7493 Infineon Technologies AG

Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7493PBF International Rectifier

Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA