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IRF7749L2TRPBF - Infineon

Description: INFINEON - IRF7749L2TRPBF. - N CH MOSFET, 60V, 33A, DIRECTFET L8

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PCB Footprints
IRF7749L2TRPBF - Infineon PCB footprint - Other - Other - DIRECTFET L8 (Large Size Can)
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3D Models
IRF7749L2TRPBF - Infineon  - 3D model - Other - DIRECTFET L8 (Large Size Can)
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IRF7749L2TRPBF Details

  • Manufacturer Part Number:

    IRF7749L2TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    260 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XBCC-N9

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    800 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7749L2TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7749L2TRPBF is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7749L2TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7749L2TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowable power dissipation for the IRF7749L2TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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