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irf840 - Vishay

Description: MOSFET N-Chan 500V 8.0 Amp

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irf840 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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irf840 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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irf840 Details

  • Manufacturer Part Number:

    IRF840

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

irf840 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRF840 is typically defined by the voltage and current ratings. The device can handle up to 500V and 8A, but the SOA curve in the datasheet provides more detailed information on the safe operating region.
  • To ensure the IRF840 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor (Rg) can be added to slow down the turn-on time and reduce electromagnetic interference (EMI).
  • The thermal resistance (RθJA) of the IRF840 is typically around 62°C/W. This means that for every watt of power dissipated, the junction temperature will increase by 62°C. To ensure reliable operation, the device's power dissipation should be kept below the maximum allowed value, and a suitable heat sink may be required to keep the junction temperature within the recommended range.
  • Yes, the IRF840 can be used in high-frequency switching applications, but the device's switching characteristics, such as the rise and fall times, should be considered. The IRF840 has a relatively high input capacitance (Ciss) and a moderate output capacitance (Coss), which can affect the switching performance. A suitable gate drive and layout design are essential to minimize switching losses and ensure reliable operation.
  • To protect the IRF840 from overvoltage and overcurrent conditions, a suitable protection circuit can be implemented. This may include a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect overcurrent conditions. Additionally, a thermal protection circuit can be used to detect overheating and shut down the device if necessary.

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irf840 Overview

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Part Image IRF840PBF Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF840PBF Vishay Siliconix

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF840 International Rectifier

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF840 Harris Semiconductor

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF840 TT Electronics Power and Hybrid / Semelab Limited

8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

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