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IRF9540 - Vishay

Description: Trans MOSFET P-CH 100V 19A 3-Pin(3+Tab) TO-220AB - Bulk

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Symbol
IRF9540 - Vishay - PCB symbol
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PCB Footprints
IRF9540 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRF9540 - Vishay - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF9540 Details

  • Manufacturer Part Number:

    IRF9540

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9540 Frequently Asked Questions (FAQs)

  • The IRF9540 can operate safely between -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
  • To ensure proper biasing, the gate-source voltage (VGS) should be between 2V to 4V for optimal performance. A voltage regulator or a zener diode can be used to regulate the gate voltage.
  • The recommended gate resistor value is typically between 1kΩ to 10kΩ, depending on the specific application and switching frequency. A higher value can reduce EMI, but may slow down the switching speed.
  • Yes, the IRF9540 is suitable for high-frequency switching applications up to 1 MHz. However, the switching frequency should be limited to ensure the device remains within its safe operating area (SOA).
  • To protect the IRF9540, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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IRF9540 Overview

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IRF9540 Alternates

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Image Part Number Model
Part Image IRF9540 Rochester Electronics LLC

19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Image IRF9540 Samsung Semiconductor

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Image IRF9540PBF International Rectifier

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF9540 International Rectifier

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF9540 Vishay Siliconix

Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
For a full list of alternate parts for IRF9540, check out Findchips.com