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IRF9630 - Vishay

Description: Trans MOSFET P-CH 200V 6.5A 3-Pin(3+Tab) TO-220AB - Bulk

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PCB Footprints
IRF9630 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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IRF9630 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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IRF9630 Details

  • Manufacturer Part Number:

    IRF9630

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220AB, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9630 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9630 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V, and the drain-source voltage (Vds) should be within the recommended operating range.
  • The recommended gate resistor value for the IRF9630 is typically between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the IRF9630 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • To protect the IRF9630, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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IRF9630 Overview

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Part Image IRF9630 Rochester Electronics LLC

6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Image IRF9630 Samsung Semiconductor

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9630 Vishay Siliconix

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9630 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB