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IRF9910PBF - Infineon

Description: Infineon IRF9910PBF Dual N-channel MOSFET, 10 A, 12 A, 20 V HEXFET, 8-Pin SOIC

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Part Image IRF9910PBF-1 Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), N-Channel, Metal-oxide Semiconductor FET

Part Image IRF9910 Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA