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IRFB3407ZPBF - Infineon

Description: INFINEON - IRFB3407ZPBF - Power MOSFET, N Channel, 75 V, 120 A, 0.005 ohm, TO-220, Through Hole

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Symbol
IRFB3407ZPBF - Infineon - PCB symbol
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PCB Footprints
IRFB3407ZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 AB
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3D Models
IRFB3407ZPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220 AB
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IRFB3407ZPBF Details

  • Manufacturer Part Number:

    IRFB3407ZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    120 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Surface Mount:

    NO

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IRFB3407ZPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB3407ZPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRFB3407ZPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB3407ZPBF is suitable for high-frequency switching applications, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.

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IRFB3407ZPBF Overview

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