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IRFB7446GPBF - Infineon

Description: MOSFET MOSFET, 40V, 118A, 3 62 nC Qg, TO-220AB

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PCB Footprints
IRFB7446GPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 AB
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IRFB7446GPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220 AB
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IRFB7446GPBF Details

  • Manufacturer Part Number:

    IRFB7446GPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    236 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    331 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    99 W

  • Pulsed Drain Current-Max (IDM):

    492 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB7446GPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB7446GPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 280 W for the IRFB7446GPBF. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow.
  • The recommended gate drive voltage for the IRFB7446GPBF is between 10 V and 15 V. However, the device can tolerate gate drive voltages up to 20 V, but this may reduce the device's reliability and lifespan. It's essential to ensure the gate drive voltage is within the recommended range to achieve optimal performance and minimize the risk of device failure.
  • To protect the IRFB7446GPBF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a voltage regulator to limit the voltage across the device. Additionally, use a current sense resistor and a current limiter or a fuse to detect and limit excessive current. It's also essential to design the PCB with adequate clearance and creepage distances to prevent electrical overstress.
  • The recommended PCB layout and design considerations for the IRFB7446GPBF include using a multi-layer PCB with a solid ground plane, keeping the high-frequency signals away from the device, and using a Kelvin connection for the gate drive. Additionally, ensure the PCB is designed to minimize parasitic inductance and capacitance, and use a thermal relief pattern for the device's thermal pad.

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