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IRFD024PBF - Vishay

Description: MOSFET N-Channel 60V 2.5A HVMDIP4 Vishay IRFD024PBF N-channel MOSFET Transistor, 2.5 A, 60 V, 4-Pin HVMDIP

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IRFD024PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVM DIP_1
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IRFD024PBF - Vishay  - 3D model - Dual-In-Line Packages - HVM DIP_1
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IRFD024PBF Details

  • Manufacturer Part Number:

    IRFD024PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DIP

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.3 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD024PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD024PBF is -55°C to 175°C.
  • Yes, the IRFD024PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.
  • The maximum drain-source voltage rating for the IRFD024PBF is 200V.
  • Yes, the IRFD024PBF is suitable for high-frequency applications up to 1MHz due to its low gate charge and fast switching times.
  • Yes, the IRFD024PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.

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IRFD024PBF Overview

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