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IRFF130 - Infineon

Description: Single N-Channel 100 V 25 W 28.5 nC Hexfet Transistor Through Hole - TO-39

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IRFF130 - Infineon PCB footprint - Other - Other - TO-205AF (TO-39)
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IRFF130 Details

  • Manufacturer Part Number:

    IRFF130

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.05

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-205AF

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFF130 Frequently Asked Questions (FAQs)

  • The IRFF130 can operate safely between -55°C to 175°C, but the recommended operating temperature range is -40°C to 150°C for optimal performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V, and the drain-source voltage (Vds) should be between 10V to 100V, depending on the application.
  • The maximum continuous drain current (Id) for the IRFF130 is 14A, but it can handle up to 42A for short pulses (≤ 100μs).
  • Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • Yes, the IRFF130 is suitable for high-frequency switching applications up to 1MHz, but be aware of the increased power losses and consider using a gate driver to minimize switching losses.

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IRFF130 Overview

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Part Image 2N6796 TT Electronics Resistors

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Part Image 2N6796R1 TT Electronics Power and Hybrid / Semelab Limited

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Part Image IRFF130 Thomson Consumer Electronics

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Part Image JANTX2N6796 Unitrode Corporation

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For a full list of alternate parts for IRFF130, check out Findchips.com