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IRFH5215TRPBF - Infineon

Description: MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC

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IRFH5215TRPBF - Infineon PCB footprint - Other - Other - PQFN 5x6 Outline "B" Package Details
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IRFH5215TRPBF - Infineon  - 3D model - Other - PQFN 5x6 Outline "B" Package Details
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IRFH5215TRPBF Details

  • Manufacturer Part Number:

    IRFH5215TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    108 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFH5215TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFH5215TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • The recommended gate drive voltage for the IRFH5215TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFH5215TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-protective environment.
  • The maximum allowable power dissipation for the IRFH5215TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET