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IRFI1310NPBF - Infineon

Description: MOSFETs MOSFT 100V 22A 36mOhm 80nC

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IRFI1310NPBF Details

  • Manufacturer Part Number:

    IRFI1310NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFI1310NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFI1310NPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRFI1310NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFI1310NPBF can be used in high-frequency switching applications, but ensure proper thermal management and consider the device's switching losses and parasitic capacitances.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper handling and storage procedures to prevent ESD damage.

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IRFI1310NPBF Overview

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