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IRFP150A - onsemi

Description: N-Channel 100 V 43A (Tc) 193W (Tc) Through Hole TO-3PN

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PCB Footprints
IRFP150A - onsemi PCB footprint - Other - Other - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O_2026-1.1
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3D Models
IRFP150A - onsemi  - 3D model - Other - TO−3P−3LD / EIAJ SC−65, ISOLATED CASE 340BZ ISSUE O_2026-1.1
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IRFP150A Details

  • Manufacturer Part Number:

    IRFP150A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3P, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    1999-06-06

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    740 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    43 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    170 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP150A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP150A is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP150A, the SOA is typically limited by the maximum voltage and current ratings, as well as the thermal limitations of the device.
  • To ensure proper thermal management of the IRFP150A, it is essential to provide adequate heat sinking, such as a heat sink or a thermal interface material (TIM), to dissipate heat generated by the device. The thermal resistance of the device, heat sink, and TIM should be considered to ensure the junction temperature remains within the recommended operating range.
  • The recommended gate drive voltage for the IRFP150A is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).
  • To protect the IRFP150A from overvoltage and overcurrent, it is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout and routing for the IRFP150A should minimize parasitic inductance and capacitance, and ensure good thermal conductivity. A good layout should also provide a low-impedance path for the drain and source connections, and minimize the loop area of the gate drive circuitry.

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IRFP150A Overview

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Part Image IRFP150A Fairchild Semiconductor Corporation

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Part Image IRFP150A Rochester Electronics LLC

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