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IRFP21N60LPBF - Vishay

Description: Trans MOSFET N-CH 600V 21A

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IRFP21N60LPBF - Vishay - PCB symbol
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PCB Footprints
IRFP21N60LPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247 AC
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3D Models
IRFP21N60LPBF - Vishay - 3D model - Transistor Outline, Vertical - TO 247 AC
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IRFP21N60LPBF Details

  • Manufacturer Part Number:

    IRFP21N60LPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.32 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP21N60LPBF Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. Consult the application note AN1045 from Vishay for guidance on SOA calculations.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise time and minimize ringing.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. Consult the application note AN1025 from Vishay for PCB layout guidelines.
  • Yes, the IRFP21N60LPBF is suitable for high-frequency switching applications up to several hundred kHz. However, be aware of the device's switching losses, which increase with frequency. Ensure proper gate drive and PCB layout to minimize losses and ringing.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRFP21N60LPBF Overview

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Part Image SIHFP21N60L-E3 Vishay Siliconix

Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IRFP21N60LPBF Vishay Siliconix

Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247