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IRFP240 - Vishay

Description: MOSFET N-CH 200V 20A TO-247AC

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IRFP240 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-247+-
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IRFP240 - Vishay  - 3D model - Transistor Outline, Vertical - to-247+-
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IRFP240 Details

  • Manufacturer Part Number:

    IRFP240

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    510 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP240 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRFP240 is typically defined by the manufacturer as a graph of drain-source voltage (Vds) vs. drain current (Id) at a given temperature. It's essential to ensure the device operates within this area to prevent damage or premature failure.
  • The RθJC for the IRFP240 can be calculated using the formula: RθJC = (TJ - TC) / Pd, where TJ is the junction temperature, TC is the case temperature, and Pd is the power dissipation. The datasheet provides the maximum junction temperature (TJ) and the thermal resistance (RθJA) from junction to ambient.
  • The recommended gate drive voltage for the IRFP240 is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption.
  • To ensure proper cooling, consider the following: use a heat sink with a thermal interface material (TIM) to reduce thermal resistance, ensure good airflow around the device, and avoid thermal hotspots. The datasheet provides thermal resistance values to help with thermal design.
  • The IRFP240 has an internal ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Use ESD-safe materials, handle devices by the body or pins, and avoid touching the pins or leads.

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IRFP240 Overview

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Part Image IRFP240PBF Vishay Intertechnologies

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Part Image SIHFP240 Vishay Siliconix

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP240 FCI Semiconductor

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Part Image IRFP240 STMicroelectronics

Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218