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IRFP31N50LPBF - Vishay

Description: MOSFET 500V N-CH HEXFET

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IRFP31N50LPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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3D Models
IRFP31N50LPBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_
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IRFP31N50LPBF Details

  • Manufacturer Part Number:

    IRFP31N50LPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    460 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    59 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    124 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP31N50LPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRFP31N50LPBF is 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
  • The maximum current rating of the IRFP31N50LPBF is 31A, but this is dependent on the operating conditions, such as temperature and duty cycle.
  • Use a voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage, and follow proper ESD handling procedures to prevent damage from electrostatic discharge.
  • The thermal resistance (RθJA) of the IRFP31N50LPBF is 62°C/W, which means the device can dissipate 1W of power for every 62°C rise in temperature.

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IRFP31N50LPBF Overview

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Part Image IRFP31N50LPBF Vishay Siliconix

Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3