Part Image

IRFP4227PBF - Infineon

Description: IRFP4227PBF N-Channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-247AC Infineon

Download IRFP4227PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFP4227PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC-ren2
click to zoom
3D Models
IRFP4227PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC-ren2
click to zoom

IRFP4227PBF Details

  • Manufacturer Part Number:

    IRFP4227PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP4227PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFP4227PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRFP4227PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFP4227PBF is suitable for switching applications due to its low RDS(on) and high current capability. However, ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage to the device.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFP4227PBF Overview

Use the download button to access the IRFP4227PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFP4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFP4227PBF

Showing 0 results