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IRFP460 - Vishay

Description: N-channel MOSFET,IRFP460 20A 500V

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PCB Footprints
IRFP460 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 AD
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3D Models
IRFP460 - Vishay  - 3D model - Transistor Outline, Vertical - TO-247 AD
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IRFP460 Details

  • Manufacturer Part Number:

    IRFP460

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    960 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP460 Frequently Asked Questions (FAQs)

  • The maximum SOA for the IRFP460 is typically defined by the manufacturer as a graph of drain-source voltage (Vds) vs. drain current (Id) at a given temperature. It's essential to ensure the device operates within this area to prevent damage or premature failure.
  • The RθJC for the IRFP460 can be calculated using the formula: RθJC = (TJ - TC) / Pd, where TJ is the junction temperature, TC is the case temperature, and Pd is the power dissipation. The datasheet provides the maximum junction temperature (TJ) and the thermal resistance (RθJA) from junction to ambient.
  • The recommended gate drive voltage for the IRFP460 is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can reduce switching losses but may also increase the risk of gate oxide damage.
  • To ensure proper cooling, consider the following: 1) use a heat sink with a thermal interface material (TIM) to reduce thermal resistance, 2) ensure good airflow around the heat sink, 3) consider using a fan or other cooling system, and 4) monitor the device's temperature using a thermocouple or thermal sensor.
  • The IRFP460 has an internal ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag or container.

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IRFP460 Overview

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IRFP460 Alternates

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Image Part Number Model
Part Image IRFP460 Rochester Electronics LLC

20A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Part Image IRFP460PBF Vishay Siliconix

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP460 Intersil Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP460 NXP Semiconductors

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IRFP460 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

For a full list of alternate parts for IRFP460, check out Findchips.com