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IRFPE50 - Vishay

Description: MOSFET N-CHANNEL 800V - Bulk

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Symbol
IRFPE50 - Vishay - PCB symbol
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PCB Footprints
IRFPE50 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC
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3D Models
IRFPE50 - Vishay - 3D model - Transistor Outline, Vertical - TO-247AC
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IRFPE50 Details

  • Manufacturer Part Number:

    IRFPE50

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    770 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    7.8 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPE50 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFPE50 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum ratings and ensure that the junction temperature (Tj) does not exceed 150°C.
  • The thermal resistance (Rth) of the IRFPE50 can be calculated using the following formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the IRFPE50 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and power consumption.
  • Yes, the IRFPE50 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Additionally, ensure that the device is properly cooled and operated within its maximum ratings.
  • To ensure proper cooling, follow these guidelines: 1) Use a heat sink with a thermal resistance (Rth) that is compatible with the device's power dissipation. 2) Apply a thermal interface material (TIM) between the device and heat sink. 3) Ensure good airflow around the heat sink. 4) Consider using a fan or other cooling mechanism for high-power applications.

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IRFPE50 Overview

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