HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
194 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
13 A
Drain-source On Resistance-Max:
0.205 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252AA
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
66 W
Pulsed Drain Current-Max (IDM):
52 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFR5410TRRPBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRFR5410TRRPBF is -55°C to 175°C.
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and design guidelines.
The maximum allowable voltage for the IRFR5410TRRPBF is 100V.
Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage to the device.
The recommended gate drive voltage for the IRFR5410TRRPBF is between 10V and 15V.
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IRFR5410TRRPBF Overview
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