AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
150 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
55 V
Drain Current-Max (ID):
18 A
Drain-source On Resistance-Max:
0.11 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252AA
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e0
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
P-CHANNEL
Pulsed Drain Current-Max (IDM):
64 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Tin/Lead (Sn/Pb)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFR5505 Frequently Asked Questions (FAQs)
The maximum junction temperature (Tj) that the IRFR5505 can withstand is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
To calculate the power dissipation of the IRFR5505, you need to know the drain-source on-resistance (Rds(on)), the drain current (ID), and the voltage drop across the MOSFET (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * ID^2 + Vds * ID. You can find the Rds(on) and Vds values in the datasheet.
The recommended gate drive voltage for the IRFR5505 is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve the switching performance, but it may also increase the power consumption and EMI.
Yes, the IRFR5505 is suitable for high-frequency switching applications up to 1MHz. However, you need to ensure that the gate drive circuitry and the layout are optimized for high-frequency operation to minimize the switching losses and EMI.
To protect the IRFR5505 from overvoltage and overcurrent, you can use a voltage clamp circuit and a current sense resistor. The voltage clamp circuit can limit the voltage across the MOSFET, while the current sense resistor can detect overcurrent conditions and trigger a protection circuit to shut down the device.
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IRFR5505 Overview
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