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IRFS3006TRLPBF - Infineon

Description: Infineon IRFS3006TRLPBF N-channel MOSFET, 270 A, 60 V HEXFET, 3+Tab-Pin TO-263AB

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IRFS3006TRLPBF Details

  • Manufacturer Part Number:

    IRFS3006TRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    534 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    1080 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS3006TRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS3006TRLPBF is -55°C to 175°C.
  • The recommended PCB footprint for the IRFS3006TRLPBF is a 3.3mm x 3.3mm pad with a 0.5mm thermal via.
  • Yes, the IRFS3006TRLPBF is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive and industrial systems.
  • The maximum allowed power dissipation for the IRFS3006TRLPBF is 78W at a case temperature of 25°C.
  • Yes, the IRFS3006TRLPBF is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.

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IRFS3006TRLPBF Overview

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Image Part Number Model
Part Image IRFS3006PBF International Rectifier

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS3006TRRPBF International Rectifier

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS3006TRLPBF International Rectifier

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS3006 Infineon Technologies AG

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS3006TRL Infineon Technologies AG

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRFS3006TRLPBF, check out Findchips.com