Component Search Engine - Free access to schematic symbols, PCB footprints and 3D models

Note! To download footprints and symbols, use the build and request forms below

Build this Model Build

Request this Model (48 hours)

IRFU224PBF Overview

No models are available for download for IRFU224PBF. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.

To find more CAD model downloads similar to this part, try a partial part number search, like IRFU2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFU224PBF

Showing 0 results

IRFU224PBF Alternates

Showing results

Image

Part Number

Model

IRFU224PBF International Rectifier

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IRFU224 International Rectifier

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IRFU224 Vishay Siliconix

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

IRFU224 Samsung Semiconductor

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFU224 Vishay Intertechnologies

Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

For a full list of alternate parts for IRFU224PBF, check out Findchips.com


Please enter a minimum 3 letters or numbers
← Prev Next →

Image	Part Number	Model
	IRFU224PBF International Rectifier Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
	IRFU224 International Rectifier Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
	IRFU224 Vishay Siliconix Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
	IRFU224 Samsung Semiconductor Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	IRFU224 Vishay Intertechnologies Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
For a full list of alternate parts for IRFU224PBF, check out Findchips.com

IRFU224PBF - Vishay

Build this Model Build

Request this Model (48 hours)

Datasheet PDF Preview

IRFU224PBF Overview

Parts related to IRFU224PBF

Select Package Category

Quick Jump

Package Categories

Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

BGA

Chip Array

Chip Non-Polarised

Chip Polarised

Connector

Dual-In-Line Sockets

Header, Receptacle

Header, Shrouded

Header, Unshrouded

Moulded Non-Polarised

Moulded Polarised

QFN

QFP-PLCC

Radial Diameter

SIL-MIL

Small Outline Diode

SON

SOT

Transistor Outline, Vertical

Other

IRFU224PBF Alternates