AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
150 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
42 A
Drain-source On Resistance-Max:
0.018 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-251AA
JESD-30 Code:
R-PSIP-T3
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
140 W
Pulsed Drain Current-Max (IDM):
220 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
MATTE TIN OVER NICKEL
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFU3710ZPBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRFU3710ZPBF is -40°C to 150°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the layout compact, and use shielding and filtering components as needed.
Yes, the IRFU3710ZPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation.
To protect the device, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes, TVS diodes, and current-sensing resistors, and ensure that the device is operated within its specified ratings.
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System Verified
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IRFU3710ZPBF Overview
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