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IRFZ44NPBF - Infineon

Description: MOSFET N-Channel 55V 49A TO220AB Infineon IRFZ44NPBF N-channel MOSFET Transistor, 49 A, 55 V, 3-Pin TO-220AB

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PCB Footprints
IRFZ44NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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IRFZ44NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB
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IRFZ44NPBF Details

  • Manufacturer Part Number:

    IRFZ44NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    88 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44NPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. According to Infineon, the SOA for the IRFZ44NPBF is defined by the boundaries of Vds = 55V, Id = 50A, and Pd = 125W.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. This can be achieved by applying a thermal interface material (TIM) between the device and the heat sink, and ensuring good contact between the two. Additionally, the heat sink should be designed to provide adequate airflow to dissipate the heat generated by the device.
  • The recommended gate drive voltage for the IRFZ44NPBF is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. It's essential to consult the datasheet and application notes for more information.
  • To protect the IRFZ44NPBF from electrostatic discharge (ESD), it's essential to handle the device with care and follow proper ESD precautions. This includes using an ESD wrist strap or mat, storing the device in an anti-static bag or container, and avoiding touching the device's pins or leads.
  • The maximum allowed voltage for the IRFZ44NPBF is 55V. Exceeding this voltage can cause damage to the device and affect its reliability.

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IRFZ44NPBF Overview

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Part Image IRFZ44NPBF International Rectifier

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image AUIRFZ44N Infineon Technologies AG

Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ44N NXP Semiconductors

Power Field-Effect Transistor, 49A I(D), 55V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image STP55NE06 STMicroelectronics

Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for IRFZ44NPBF, check out Findchips.com